A DIVIDED WORD-LINE STRUCTURE IN THE STATIC RAM AND ITS APPLICATION TO A 64K FULL CMOS RAM

被引：103
|
作者：
YOSHIMOTO, M
ANAMI, K
SHINOHARA, H
YOSHIHARA, T
TAKAGI, H
NAGAO, S
KAYANO, S
NAKANO, T
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 05期
关键词：
D O I：
10.1109/JSSC.1983.1051981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：479 / 485
页数：7
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