A BATTERY BACKUP 64K CMOS RAM WITH DOUBLE-LEVEL ALUMINUM TECHNOLOGY

被引：9
|
作者：
WATANABE, T [1 ]
HAYASI, M [1 ]
SASAKI, I [1 ]
AKATSUKA, Y [1 ]
TSUJIDE, T [1 ]
YAMAMOTO, H [1 ]
KUDOH, O [1 ]
TAKAHASHI, S [1 ]
HARA, T [1 ]
机构：
[1] NEC CORP,DIV LSI 1,DEPT PROC DEV,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 05期
关键词：
D O I：
10.1109/JSSC.1983.1051983
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：494 / 498
页数：5
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