A BATTERY BACKUP 64K CMOS RAM WITH DOUBLE-LEVEL ALUMINUM TECHNOLOGY

被引：9

作者：

WATANABE, T ^{[1
]}

HAYASI, M ^{[1
]}

SASAKI, I ^{[1
]}

AKATSUKA, Y ^{[1
]}

TSUJIDE, T ^{[1
]}

YAMAMOTO, H ^{[1
]}

KUDOH, O ^{[1
]}

TAKAHASHI, S ^{[1
]}

HARA, T ^{[1
]}

机构：

[1] NEC CORP,DIV LSI 1,DEPT PROC DEV,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 05期

关键词：

D O I：

10.1109/JSSC.1983.1051983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：494 / 498

页数：5

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