HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION

被引：66

作者：

DIMARIA, DJ ^{[1
]}

ARNETT, PC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 12期

关键词：

D O I：

10.1063/1.88046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：711 / 713

页数：3

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