HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION

被引：66
|
作者：
DIMARIA, DJ [1 ]
ARNETT, PC [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 12期
关键词：
D O I：
10.1063/1.88046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：711 / 713
页数：3
相关论文
共 50 条
  • [21] REDUCED INTERFACE STATE DENSITIES FOR REMOTE MICROWAVE PLASMA SILICON-NITRIDE
    LANDHEER, D
    BARDWELL, JA
    SPROULE, I
    SCOTTTHOMAS, J
    KWOK, W
    LAU, WM
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 795 - 798
  • [22] INTERFACE MICROCHEMISTRY OF SILICON-NITRIDE NICKEL-CHROMIUM ALLOY JOINTS
    PETEVES, SD
    MOULAERT, M
    NICHOLAS, MG
    METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1992, 23 (06): : 1773 - 1781
  • [23] RELAXATIONAL POLARIZATION AND CHARGE INJECTION IN THIN-FILMS OF SILICON-NITRIDE
    HOMANN, M
    KLIEM, H
    MICROELECTRONICS JOURNAL, 1994, 25 (07) : 559 - 566
  • [24] ENERGY SPECTRUM OF GALLIUM-ARSENIDE - SILICON-NITRIDE INTERFACE STATES
    SENOSHEN.OV
    MARONCHU.YE
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (05): : 59 - 64
  • [25] SILICON-NITRIDE SEMICONDUCTOR INTERFACE STATE DENSITY AS A FUNCTION OF THE INSULATOR STOICHIOMETRY
    BAGNOLI, PE
    PICCIRILLO, A
    VALENTI, P
    CIVALE, G
    GOBBI, AL
    APPLIED SURFACE SCIENCE, 1992, 56-8 (pt B) : 881 - 887
  • [26] FORMATION OF GALLIUM NITRIDE AT THE INTERFACE BETWEEN SILICON-NITRIDE ENCAPSULANT AND ION-IMPLANTED GAAS
    MORITA, E
    KAWADO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L315 - L317
  • [27] RESONANT TUNNELING THROUGH AMORPHOUS-SILICON SILICON-NITRIDE DOUBLE-BARRIER STRUCTURES
    MIYAZAKI, S
    IHARA, Y
    HIROSE, M
    PHYSICAL REVIEW LETTERS, 1987, 59 (01) : 125 - 127
  • [28] Study on change in SIMS intensities near the interface between silicon-nitride film and silicon substrate
    Hasegawa, T
    Date, T
    Karen, A
    Masuda, A
    APPLIED SURFACE SCIENCE, 2004, 231 : 725 - 728
  • [29] EFFECT OF AMMONIA PLASMA TREATMENT ON PLASMA DEPOSITED SILICON-NITRIDE FILMS SILICON INTERFACE CHARACTERISTICS
    ARAI, H
    TANAKA, K
    KOHDA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 831 - 834
  • [30] INTERFACE STATES AND FIXED CHARGES IN MNOS STRUCTURES WITH APCVD AND PLASMA SILICON-NITRIDE
    HEZEL, R
    BLUMENSTOCK, K
    SCHORNER, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) : 1679 - 1683
12345