HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION

被引：66
|
作者：
DIMARIA, DJ [1 ]
ARNETT, PC [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 12期
关键词：
D O I：
10.1063/1.88046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：711 / 713
页数：3
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