NONDESTRUCTIVE CHARACTERIZATION OF DEEP LEVELS IN SEMIINSULATING GAAS WAFERS USING MICROWAVE IMPEDANCE MEASUREMENT

被引：11
|
作者：
FUJISAKI, Y
TAKANO, Y
ISHIBA, T
机构：
[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 11期
关键词：
D O I：
10.1143/JJAP.25.L874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
6
引用
收藏
页码：L874 / L877
页数：4
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