NONDESTRUCTIVE CHARACTERIZATION OF DEEP LEVELS IN SEMIINSULATING GAAS WAFERS USING MICROWAVE IMPEDANCE MEASUREMENT

被引：11

作者：

FUJISAKI, Y

TAKANO, Y

ISHIBA, T

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.L874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L874 / L877

页数：4

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