NONDESTRUCTIVE CHARACTERIZATION OF DEEP LEVELS IN SEMIINSULATING GAAS WAFERS USING MICROWAVE IMPEDANCE MEASUREMENT

被引：11
|
作者：
FUJISAKI, Y
TAKANO, Y
ISHIBA, T
机构：
[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 11期
关键词：
D O I：
10.1143/JJAP.25.L874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
6
引用
收藏
页码：L874 / L877
页数：4
相关论文
共 50 条
  • [41] Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves
    Hamano, Akihide
    Ohno, Seigo
    Minamide, Hiroaki
    Ito, Hiromasa
    Usuki, Yoshiyuki
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 109 - +
  • [42] CHARACTERIZATION OF DEEP LEVELS IN MODULATION-DOPED ALGAAS/GAAS FETS
    VALOIS, AJ
    ROBINSON, GY
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 360 - 362
  • [43] CHARACTERIZATION OF DEEP-LEVELS AROUND THE DISLOCATION IN GAAS MATERIALS BY CATHODOLUMINESCENCE
    IKEDA, K
    ISHII, Y
    JOURNAL OF LUMINESCENCE, 1988, 40-1 : 361 - 362
  • [44] Characterization of interface deep levels in As vapor grown EPI-GaAs
    Ostrovskii, IV
    Olikh, OY
    SOLID STATE COMMUNICATIONS, 1998, 107 (07) : 341 - 343
  • [45] Characterization of interface deep levels in as vapor grown EPI-GaAs
    Kiev Taras Shevchenko Univ, Kiev, Ukraine
    Solid State Commun, 7 (341-343):
  • [46] Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique
    Kaniewska, M.
    Engstrom, O.
    Pacholak-Cybulska, M.
    Sadeghi, M.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (04): : 987 - 991
  • [47] MEASUREMENTS OF NONSTOICHIOMETRY IN UNDOPED LEC GAAS WAFERS USING PRECISE LATTICE-PARAMETER MEASUREMENT
    TAKANO, Y
    FUJISAKI, Y
    ISHIBA, T
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 302 - 302
  • [48] NONDESTRUCTIVE MEASUREMENT OF MINORITY-CARRIER LIFETIMES IN SI WAFERS USING FREQUENCY-DEPENDENCE OF AC PHOTOVOLTAGES
    HONMA, N
    MUNAKATA, C
    ITOH, H
    WARABISAKO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (05): : 743 - 749
  • [49] NONDESTRUCTIVE CHARACTERIZATION OF GA1-XALXAS-GAAS INTERFACES USING NUCLEAR PROFILING
    ROSNER, JS
    LESSER, PMS
    POLLAK, FH
    WOODALL, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 285 - 285
  • [50] Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry
    Nakano, H
    Sakamoto, T
    Taniguchi, K
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1384 - 1389
12345