NONDESTRUCTIVE CHARACTERIZATION OF DEEP LEVELS IN SEMIINSULATING GAAS WAFERS USING MICROWAVE IMPEDANCE MEASUREMENT

被引：11

作者：

FUJISAKI, Y

TAKANO, Y

ISHIBA, T

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.L874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L874 / L877

页数：4

共 50 条

[21] Moisture measurement in paper industry using microwave nondestructive method
Jayanthy, T.
Sreejaa, B. S.
Sundari, G.
MEASUREMENT 2007: 6TH INTERNATIONAL CONFERENCE ON MEASUREMENT, PROCEEDINGS, 2007, : 241 - +
[22] CONTACTLESS EVALUATION OF SEMIINSULATING GAAS WAFER RESISTIVITY USING THE TIME-DEPENDENT CHARGE MEASUREMENT
STIBAL, R
WINDSCHEIF, J
JANTZ, W
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10) : 995 - 1001
[23] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ALXGA1-XAS/GAAS USING NONDESTRUCTIVE ACOUSTOELECTRIC VOLTAGE MEASUREMENT
TABIBAZAR, M
HAJJAR, F
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) : 1189 - 1195
[24] Measurement of the thermal conductivity of Si and GaAs wafers using the photothermal displacement technique
Kim, JH
Seong, D
Ihm, GH
Rhee, C
INTERNATIONAL JOURNAL OF THERMOPHYSICS, 1998, 19 (01) : 281 - 290
[25] Measurement of the Thermal Conductivity of Si and GaAs Wafers Using the Photothermal Displacement Technique
J. H. Kim
D. Seong
G. H. Ihm
C. Rhee
International Journal of Thermophysics, 1998, 19 : 281 - 290
[26] Nondestructive durian maturity determination by using microwave free space measurement
Rutpralom, Thitipan
Chamnongthai, Kosin
Kumhom, Pinit
Krairiksh, Monai
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS, 2006, : 1351 - 1354
[27] HIGH-RESOLUTION SCANNING PHOTOLUMINESCENCE CHARACTERIZATION OF SEMIINSULATING GAAS USING A LASER SCANNING MICROSCOPE
MAREK, J
ELLIOT, AG
WILKE, V
GEISS, R
APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1732 - 1734
[28] Characterization of deep levels in Si-MOS structure using ICTS measurement
Iwamoto, S
Yoshida, H
Kishino, S
ELECTRICAL ENGINEERING IN JAPAN, 2000, 130 (04) : 76 - 86
[29] DEEP-LEVEL SYMMETRY STUDIES USING BALLISTIC-PHONON TRANSMISSION IN UNDOPED SEMIINSULATING GAAS
CULBERTSON, JC
STROM, U
WOLF, SA
PHYSICAL REVIEW B, 1987, 36 (05): : 2962 - 2964
[30] NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)
PAN, CL
WU, HH
HSIEH, TR
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07): : 1430 - 1431

← 1 2 3 4 5 →