INTENSITY DEPENDENCE OF THE DEEP LEVELS OF SEMIINSULATING GAAS ON THE ANNEALING TEMPERATURE

被引：2
|
作者：
CHAN, PW [1 ]
LO, VC [1 ]
XU, SD [1 ]
WONG, SP [1 ]
机构：
[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,SHA TIN,HONG KONG
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1992年 / 11卷 / 04期
关键词：
D O I：
10.1007/BF00741419
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：196 / 198
页数：3
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