EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON

被引：72
|
作者：
FAHEY, P
DUTTON, RW
MOSLEHI, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期
关键词：
D O I：
10.1063/1.94445
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：683 / 685
页数：3
相关论文
共 50 条
  • [21] DIFFUSION OF PHOSPHORUS IN ARSENIC AND BORON-DOPED SILICON
    WITTEL, F
    DUNHAM, S
    APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1415 - 1417
  • [22] Phosphorus and boron diffusion in silicon under equilibrium conditions
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2254 - 2256
  • [23] The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C
    Lin, Yiheng
    Yasuda, Hiroshi
    Schiekofer, Manfred
    Xia, Guangrui
    JOURNAL OF MATERIALS SCIENCE, 2016, 51 (03) : 1532 - 1540
  • [24] DISLOCATION MODEL OF ANOMALOUS DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
    PASHKOV, VI
    PAVLOV, PV
    SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (04): : 867 - +
  • [25] Analysis of simultaneous boron and phosphorus diffusion gettering in silicon
    Schoen, J.
    Schubert, M. C.
    Warta, W.
    Savin, H.
    Haarahiltunen, A.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (11): : 2589 - 2592
  • [26] Phosphorus and boron diffusion gettering of iron in monocrystalline silicon
    Talvitie, H.
    Vahanissi, V.
    Haarahiltunen, A.
    Yli-Koski, M.
    Savin, H.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
  • [27] INTERACTION OF BORON AND PHOSPHORUS IN THE CASE OF SEQUENTIAL DIFFUSION IN SILICON
    SOKOLOV, VI
    FEDOROVICH, NA
    GURYANOV, GM
    KOVARSKII, AP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1044 - 1046
  • [28] CONCENTRATION-DEPENDENT DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
    THAI, ND
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2859 - &
  • [29] EFFECT OF THERMAL OXIDATION OF SILICON ON BORON DIFFUSION IN EXTRINSIC CONDITIONS.
    Ishikawa, Yutaka
    Nakamichi, Ichiro
    Matsumoto, Satoru
    Nimi, Tatsuya
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (09): : 1602 - 1603
  • [30] The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C
    Yiheng Lin
    Hiroshi Yasuda
    Manfred Schiekofer
    Guangrui Xia
    Journal of Materials Science, 2016, 51 : 1532 - 1540
12345