EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON

被引：72
|
作者：
FAHEY, P
DUTTON, RW
MOSLEHI, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期
关键词：
D O I：
10.1063/1.94445
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：683 / 685
页数：3
相关论文
共 50 条
  • [11] Pressure effects on the diffusion of boron and phosphorus in silicon
    Phan Thi Thanh Hong
    Vu Van Hung
    Nguyen Van Nghia
    Ho Khac Hieu
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2019, 33 (23):
  • [12] ANOMALOUS DIFFUSION OF BORON, PHOSPHORUS AND ARSENIC IN SILICON
    JAIN, RK
    ACTA CIENTIFICA VENEZOLANA, 1977, 28 : 32 - 32
  • [13] DIFFUSION CHARACTERISTICS OF BORON AND PHOSPHORUS IN POLYCRYSTALLINE SILICON
    BUONAQUISTI, AD
    CARTER, W
    HOLLOWAY, PH
    THIN SOLID FILMS, 1983, 100 (03) : 235 - 248
  • [14] Effect of fluorine implantation dose on boron thermal diffusion in silicon
    El Mubarek, H.A.W., 1600, American Institute of Physics Inc. (96):
  • [15] Modeling of processes of gettering the generation-recombination centers in silicon at diffusion of phosphorus and boron
    National University of Science and Technology MISiS, 4 Leninsky av., Moscow
    119049, Russia
    不详
    111538, Russia
    不详
    119454, Russia
    Appl. Phys., 5 (15-20):
  • [16] Effect of fluorine implantation dose on boron thermal diffusion in silicon
    El Mubarek, HAW
    Bonar, JM
    Dilliway, GD
    Ashburn, P
    Karunaratne, M
    Willoughby, AF
    Wang, Y
    Hemment, PLF
    Price, R
    Zhang, J
    Ward, P
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4114 - 4121
  • [17] Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon
    Aleksandrov, OV
    Afonin, NN
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) : 139 - 143
  • [18] SOLUBILITY AND THERMAL PREDEPOSITION OF PHOSPHORUS AND BORON IN SILICON
    ANGELUCCI, R
    ARMIGLIATO, A
    CELOTTI, G
    NEGRINI, P
    NOBILI, D
    OSTOJA, P
    SERVIDORI, M
    SOLMI, S
    ELETTROTECNICA, 1977, 64 (08): : 663 - 663
  • [19] EFFECT OF PHASE-ORIGIN PROCESSES ON PHOSPHORUS DIFFUSION PECULIARITIES IN SILICON
    PROKHOROV, VI
    SOKOLOV, VI
    SOROKIN, LM
    FIZIKA TVERDOGO TELA, 1981, 23 (05): : 1302 - 1307
  • [20] OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
    TANIGUCHI, K
    KUROSAWA, K
    KASHIWAGI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C122 - C122
12345