PROPERTIES OF THERMALLY GROWN SILICON NITRIDE FILMS

被引：4

|

作者：

OKADA, K

SAKANE, H

SUGIOKA, Y

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1967年 / 23卷 / 03期

关键词：

D O I：

10.1143/JPSJ.23.655

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：655 / &

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