PROPERTIES OF THERMALLY GROWN SILICON NITRIDE FILMS

被引：4
|
作者：
OKADA, K
SAKANE, H
SUGIOKA, Y
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1967年 / 23卷 / 03期
关键词：
D O I：
10.1143/JPSJ.23.655
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：655 / &
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