INFLUENCE OF DISLOCATIONS ON DIFFUSION OF IV GROUP ELEMENTS IN SILICON

被引：0

作者：

PANTELEE.VA ^{[1
]}

BARYSHEV, RS ^{[1
]}

机构：

[1] NI LOBACHEVSKII STATE UNIV,GORKI,USSR

来源：

FIZIKA TVERDOGO TELA | 1974年 / 16卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2670 / 2673

页数：4

共 50 条

[1] EFFECT OF DISLOCATIONS ON THE DIFFUSION OF GROUP IV ELEMENTS IN SILICON.
Panteleev, V.A.
Baryshev, R.S.
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 16 (09): : 1729 - 1730
[2] INFLUENCE OF DISLOCATIONS ON DIFFUSION OF GOLD IN SILICON
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HESSE, J
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 261 - 267
[3] INFLUENCE OF ORIENTATION OF DISLOCATIONS ON DIFFUSION IN SILICON
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BARYSHEV, RS
LAINER, LV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 993 - 994
[4] INFLUENCE OF THE INTERNAL ELECTRIC FIELD ON THE DIFFUSION OF GROUP V ELEMENTS IN SILICON.
Vasilevskii, M.I.
Panteleev, V.A.
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1984, 26 (01): : 33 - 36
[5] INFLUENCE OF DISLOCATIONS ON GOLD DIFFUSION INTO THIN SILICON SLICES
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ROGERS, TL
SOLID-STATE ELECTRONICS, 1972, 15 (08) : 853 - +
[6] INFLUENCE OF OXYGEN IN SILICON ON MOTION OF DISLOCATIONS GENERATED BY DIFFUSION
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SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (10): : 2478 - +
[7] DIFFUSION MECHANISM FOR III AND V GROUP ELEMENTS, IN SILICON
PANTELEEV, VA
RUDOI, NE
OKULICH, VI
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (04): : 157 - 158
[8] EFFECTS OF DISLOCATIONS ON DIFFUSION IN SILICON
HOWES, MG
DOBSON, PS
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02): : 611 - &
[9] DISLOCATIONS IN SILICON DUE TO LOCALIZED DIFFUSION
SCHWUTTKE, GH
FAIRFIELD, JM
JOURNAL OF APPLIED PHYSICS, 1966, 37 (12) : 4394 - +
[10] DIFFUSION-INDUCED DISLOCATIONS IN SILICON
WASHBURN, J
THOMAS, G
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &

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