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- [7] INFLUENCE OF RADIATION DEFECTS ON IMPURITY DIFFUSION IN SILICON.1977, 11 (10): : 1096 - 1097Karmanov, V.T.Khokhlov, A.F.Pavlov, P.V.Zorin, E.I.
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- [9] INFLUENCE OF OXYGEN ON RADIATION-STIMULATED DIFFUSION OF PHOSPHORUS IN SILICON.Soviet physics. Semiconductors, 1981, 15 (01): : 1 - 3Borisenko, V.E.Buiko, L.D.Labunov, V.A.Ukhov, V.A.
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