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- [5] Segregation of gold at dislocations confirmed by gold diffusion into highly dislocated silicon DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1783 - 1788
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- [7] INFLUENCE OF OXYGEN IN SILICON ON MOTION OF DISLOCATIONS GENERATED BY DIFFUSION SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (10): : 2478 - +
- [8] Annihilation of self-interstitials by dislocations in silicon as studied by gold diffusion POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 3 - 14
- [9] INFLUENCE OF COPPER ON THE DIFFUSION OF GOLD IN SILICON. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (12): : 1399 - 1400