EFFECT OF DISLOCATION DENSITY ON DIFFUSION OF GOLD IN THIN SILICON SLICES

被引：39

作者：

HUNTLEY, FA ^{[1
]}

WILLOUGHBY, AF ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON, ENGN MAT LABS, SOUTHAMPTON, HAMPSHIRE, ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 03期

关键词：

D O I：

10.1149/1.2403468

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：414 / 422

页数：9

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