EFFECT OF DISLOCATION DENSITY ON DIFFUSION OF GOLD IN THIN SILICON SLICES

被引：39
|
作者：
HUNTLEY, FA [1 ]
WILLOUGHBY, AF [1 ]
机构：
[1] UNIV SOUTHAMPTON, ENGN MAT LABS, SOUTHAMPTON, HAMPSHIRE, ENGLAND
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 03期
关键词：
D O I：
10.1149/1.2403468
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：414 / 422
页数：9
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