DISLOCATIONS IN SILICON DUE TO LOCALIZED DIFFUSION

被引：31

作者：

SCHWUTTKE, GH

FAIRFIELD, JM

机构：

来源：

关键词：

D O I：

10.1063/1.1708049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4394 / +

页数：1

共 50 条

[1] EFFECTS OF DISLOCATIONS ON DIFFUSION IN SILICON
HOWES, MG
DOBSON, PS
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02): : 611 - &
[2] INFLUENCE OF DISLOCATIONS ON DIFFUSION OF GOLD IN SILICON
KASTNER, S
HESSE, J
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 261 - 267
[3] DIFFUSION-INDUCED DISLOCATIONS IN SILICON
WASHBURN, J
THOMAS, G
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &
[4] INFLUENCE OF ORIENTATION OF DISLOCATIONS ON DIFFUSION IN SILICON
PANTELEEV, VA
BARYSHEV, RS
LAINER, LV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 993 - 994
[5] DIFFUSION OF ANTIMONY ALONG DISLOCATIONS IN SILICON
NEIS, A
MIMKES, J
THIN SOLID FILMS, 1982, 87 (01) : 53 - 56
[6] DIFFUSION OF ANTIMONY ALONG DISLOCATIONS IN SILICON
PAVLOV, PV
PANTELEEV, VA
MAIOROV, AV
SOVIET PHYSICS-SOLID STATE, 1964, 6 (02): : 305 - 310
[7] ELECTRONIC INSTABILITY EFFECT DUE TO DISLOCATIONS IN SILICON
GRAZHULIS, VA
KVEDER, VV
MUKHINA, VY
OSYPYAN, YA
FIZIKA TVERDOGO TELA, 1980, 22 (02): : 512 - 522
[8] EFFECT OF DIFFUSION-INDUCED DISLOCATIONS ON ANTIMONY DIFFUSION INTO SILICON
SONG, SH
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 145 - 149
[9] EFFECT OF DISLOCATIONS ON DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
BARYSHEV, RS
FIZIKA TVERDOGO TELA, 1977, 19 (03): : 882 - 884
[10] CONDITIONS FOR THE CREATION OF DISLOCATIONS BY DIFFUSION OF PHOSPHORUS INTO SILICON
STOJADINOVIC, ND
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (01): : K5 - +