共 50 条
- [31] DIFFUSION AND ELECTROTRANSPORT OF INDIUM AND SILVER ALONG DISLOCATIONS IN SILICON SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (02): : 533 - +
- [35] NATURE OF SECONDARY DISLOCATIONS OBSERVED IN SILICON AFTER DIFFUSION SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (04): : 901 - &
- [36] ON THE ELECTRONEGATIVITIES OF THE GROUP-IV ELEMENTS JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1960, 15 (3-4): : 237 - 241
- [38] INFLUENCE OF DISLOCATIONS ON ACCUMULATION OF RADIATION DEFECTS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 70 - 73
- [40] Influence of surface treatment on electrical activity of dislocations and minority carrier diffusion length in cast multicrystalline silicon Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B24 (1-3): : 74 - 77