A Memory Reliability Enhancement Technique for Multi Bit Upsets

被引:0
|
作者
Alexandre Chabot
Ihsen Alouani
Réda Nouacer
Smail Niar
机构
[1] Université Polytechnique Hauts-de-France,LAMIH, UMR CNRS
[2] CEA-LIST,IEMN, UMR CNRS
[3] Université Polytechnique Hauts-de-France,undefined
来源
关键词
Reliability; MBU; Fault injection; Memory;
D O I
暂无
中图分类号
学科分类号
摘要
Technological advances allow the production of increasingly complex electronic systems. Nevertheless, technology and voltage scaling increased dramatically the susceptibility of new devices not only to Single Bit Upsets (SBU), but also to Multiple Bit Upsets (MBU). In safety critical applications, it is mandatory to provide fault-tolerant systems, providing high reliability while meeting applications requirements. The problem of reliability is particularly expressed within the memory which represents more than 80 % of systems on chips. To tackle this problem we propose a new memory reliability techniques referred to as DPSR: Double Parity Single Redundancy. DPSR is designed to enhance computing systems resilience to SBU and MBU. Based on a thorough fault injection experiments, DPSR shows promising results; It detects and corrects more than 99.6 % of encountered MBU and has an average time overhead of less than 3 %.
引用
收藏
页码:439 / 459
页数:20
相关论文
共 50 条
  • [41] Monte Carlo simulation of particle-induced bit upsets
    Wrobel, Frederic
    Touboul, Antoine
    Vaille, Jean-Roch
    Boch, Jerome
    Saigne, Frederic
    ICRS-13 & RPSD-2016, 13TH INTERNATIONAL CONFERENCE ON RADIATION SHIELDING & 19TH TOPICAL MEETING OF THE RADIATION PROTECTION AND SHIELDING DIVISION OF THE AMERICAN NUCLEAR SOCIETY - 2016, 2017, 153
  • [42] Investigation of Single-Bit and Multiple-Bit Upsets in Oxide RRAM-Based 1T1R and Crossbar Memory Arrays
    Liu, Rui
    Mahalanabis, Debayan
    Barnaby, Hugh J.
    Yu, Shimeng
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (05) : 2294 - 2301
  • [43] A multi-bit binary arithmetic coding technique
    Andra, K
    Acharya, T
    Chakrabarti, C
    2000 INTERNATIONAL CONFERENCE ON IMAGE PROCESSING, VOL I, PROCEEDINGS, 2000, : 928 - 931
  • [44] Analytical reliability estimation of SRAM-based FPGA designs against single-bit and multiple-cell upsets
    Ramezani, Reza
    Antonio Clemente, Juan
    Franco, Francisco J.
    RELIABILITY ENGINEERING & SYSTEM SAFETY, 2020, 202 (202)
  • [45] Microdosimetry code simulation of charge-deposition spectra, single-event upsets and multiple-bit upsets
    Dyer, CS
    Comber, C
    Truscott, PR
    Sanderson, C
    Underwood, C
    Oldfield, M
    Campbell, A
    Buchner, S
    Meehan, T
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1486 - 1493
  • [46] Insights for Utilizing the Memristor as a Multi-bit Based Memory
    El-Khouly, Mostafa
    Madian, Ahmed H.
    Mostafa, Hassan
    2015 27TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM), 2015, : 79 - 82
  • [47] FinFETs with ONO BOX for multi-bit unified memory
    Chang, Sung-Jae
    Bawedin, Maryline
    Xiong, Wade
    Lee, Jong-Hyun
    Lee, Jung-Hee
    Cristoloveanu, Sorin
    MICROELECTRONIC ENGINEERING, 2013, 109 : 330 - 333
  • [48] Architecture of non volatile memory with multi-bit cells
    Campardo, G
    Micheloni, R
    MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 173 - 181
  • [49] Matrix codes: Multiple bit upsets tolerant method for SRAM memories
    Argyrides, Costas
    Zarandi, Hamid R.
    Pradhan, Dhiraj K.
    DFT 2007: 22ND IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT-TOLERANCE IN VLSI SYSTEMS, PROCEEDINGS, 2007, : 340 - 348
  • [50] An integrated ECC and redundancy repair scheme for memory reliability enhancement
    Su, CL
    Yeh, YT
    Wu, CW
    DFT 2005: 20TH IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT TOLERANCE IN VLSI SYSTEMS, 2005, : 81 - 89