Two level compact simulation methodology for timing analysis of power-switched circuits

被引:0
|
作者
Henzler, S
Georgakos, G
Berthold, J
Schmitt-Landsiedel, D
机构
[1] Tech Univ Munich, D-80290 Munich, Germany
[2] Infineon Technol AG, Corp Log, D-81541 Munich, Germany
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Standby-power dissipation in ultra-deep submicron CMOS can be reduced by power switching. As the cut-off device has a strong impact on area consumption, minimum power-down time, signal delay and leakage suppression, a proper sizing of this device is of general importance. Therefore a two level compact simulation methodology is proposed which provides fast and accurate CAD support to the switch design task.
引用
收藏
页码:789 / 798
页数:10
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