Immersion lithography for 45nm manufacturing

被引:0
|
作者
Owa, S.
Hazelton, A. [1 ]
Magoon, H.
机构
[1] Nikon Inc, Tokyo, Japan
[2] Nikon Precis Inc, Essex Jct, VT USA
来源
MICROLITHOGRAPHY WORLD | 2007年 / 16卷 / 01期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4 / +
页数:4
相关论文
共 50 条
  • [41] An integrated lithography concept with application on 45nm 1/2 pitch flash memory devices
    Dusa, Mircea
    Engelen, Andre
    Finders, Jo
    OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U317 - U328
  • [42] Intel pushes lithography limits, co-optimizes design/layout/process at 45nm
    James, Dick
    SOLID STATE TECHNOLOGY, 2008, 51 (03) : 30 - 33
  • [43] 应对45nm缺陷挑战
    Becky Pinto
    加藤昌彦
    KLA-Tencor
    集成电路应用, 2008, (Z1) : 43 - 47
  • [44] Substrate Effect on CD Control for Ion Implantation layer lithography beyond 45nm node
    Hu, Huayong
    Wu, Qiang
    Lin, Yishih
    Gu, Yiming
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 219 - 224
  • [45] Dense OPC and verification for 45nm
    Cobb, Nicolas
    Dudau, Dragos
    OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U291 - U296
  • [46] Interconnect issues post 45nm
    Rossnagel, SM
    Wisnieff, R
    Edelstein, D
    Kuan, TS
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 95 - 97
  • [47] SPECTRE Modeling for 45nm and Beyond
    Yin Chang-yong
    Hao Bo
    ICCEE 2008: PROCEEDINGS OF THE 2008 INTERNATIONAL CONFERENCE ON COMPUTER AND ELECTRICAL ENGINEERING, 2008, : 799 - 801
  • [48] OPC optimization for double dipole lithography and its application on 45nm node with dry exposure
    Park, Se-Jin
    Seo, Jae-Kyung
    Li, ChengHe
    Liu, Daisy
    An, Petros
    Kang, Xiao-Hui
    Guo, Eric
    OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 2008, 6924
  • [49] Reliability challenges for 45nm and beyond
    McPherson, J. W.
    43RD DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2006, 2006, : 176 - 181
  • [50] Analysis: All change for 45nm
    Edwards, Chris
    Engineering and Technology, 2008, 3 (01): : 18 - 19