Immersion lithography for 45nm manufacturing

被引:0
|
作者
Owa, S.
Hazelton, A. [1 ]
Magoon, H.
机构
[1] Nikon Inc, Tokyo, Japan
[2] Nikon Precis Inc, Essex Jct, VT USA
来源
MICROLITHOGRAPHY WORLD | 2007年 / 16卷 / 01期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4 / +
页数:4
相关论文
共 50 条
  • [31] Benefit of ArF immersion lithography in 55 nm logic device manufacturing
    Uchiyama, Takayuki
    Tamura, Takao
    Yoshimochi, Kazuyuki
    Graupner, Paul
    Bakker, Hans
    van Setten, Eelco
    Morisaki, Kenji
    OPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520
  • [32] 45-32nm node photomask technology with water immersion lithography
    Adachi, Takashi
    Inazuki, Yuichi
    Sutou, Takanori
    Morikawa, Yasutaka
    Toyama, Nobuhito
    Mohri, Hiroshi
    Hayashi, Naoya
    PHOTOMASK TECHNOLOGY 2006, PTS 1 AND 2, 2006, 6349
  • [33] Lithography manufacturing implementation for 65mn and 45nm nodes with model-based scattering bars using IML™ technology
    Hsu, N
    Van Den Broeke, D
    Laidig, T
    Wampler, KE
    Hollerbach, U
    Socha, R
    Chen, JF
    Hsu, S
    Shi, XL
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 355 - 367
  • [34] Immersion lithography at 157 nm
    Switkes, M
    Rothschild, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2353 - 2356
  • [35] Cell projection use in mask-less lithography for 45nm & 32nm logic nodes
    Manakli, S.
    Komami, H.
    Takizawa, M.
    Mitsuhashi, T.
    Pain, L.
    ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES, 2009, 7271
  • [36] 45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning
    Dai, Huixiong
    Bencher, Chris
    Chen, Yongmei
    Woo, Hyungje
    Ngai, Chris
    Xu, Xumou
    OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 2008, 6924
  • [37] Adouble-line/double-patterning process to extend immersion beyond 45nm
    Wagner, Christian
    Finders, Jo
    de Klerk, Jos
    Kool, Ron
    SOLID STATE TECHNOLOGY, 2007, 50 (06) : 51 - +
  • [38] MOSFET modeling for 45nm and beyond
    Cao, Yu
    McAndrew, Colin
    IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2007, : 638 - +
  • [39] An integrated lithography concept with application on 45nm 1/2 pitch flash memory devices
    ASML US Inc., 4800 Great America Parkway, Santa Clara, CA 95054
    不详
    SPIE, 1600, (2006):
  • [40] Variations in timing and leakage power of 45nm library cells due to lithography and stress effects
    Sadra, Kayvan
    Terry, Mark
    Rajagopal, Arjun
    Soper, Robert A.
    Kolarik, Donald
    Aton, Tom
    Hornung, Brian
    Khamankar, Rajesh
    Hurat, Philippe
    Kasthuri, Bala
    Ran, Yajun
    Verghese, Nishath
    DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION III, 2009, 7275