A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs

被引：0
|
作者：
Lee, Wei [1 ]
Su, Pin [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：25 / 26
页数：2
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