Doping fluctuation effects in multiple-gate SOI MOSFETs

被引：1

作者：

Colinge, C. A. ^{[1
]}

Xiong, W. ^{[2
]}

Cleavelin, C. R. ^{[2
]}

Colinge, J. -P. ^{[3
]}

机构：

[1] Texas Instruments Inc, SiTD, Dallas, TX 75265 USA

[2] Infineon Technolo, D-85579 Neubiberg, Germany

[3] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES | 2007年

关键词：

silicon-on-insulator; doping fluctuations; SOI MOSFET; multiple-gate; MOSFETs;

D O I：

10.1007/978-1-4020-6380-0_12

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Random doping fluctuation effects are studied in multiple-gate SOI MOSFETs (MuGFETs) using numerical simulation. The presence of a single doping impurity atom increases threshold voltage. Electrical parameters vary with the physical location of the impurity atom.

引用

页码：165 / +

页数：2

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