Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs

被引：0
|
作者：
Mizubayashi, W. [1 ]
Onoda, H. [2 ]
Nakashima, Y. [2 ]
Ishikawa, Y. [1 ]
Matsukawa, T. [1 ]
Endo, K. [1 ]
Liu, Y. X. [1 ]
O'uchi, S. [1 ]
Tsukada, J. [1 ]
Yamauchi, H. [1 ]
Migita, S. [1 ]
Morita, Y. [1 ]
Ota, H. [1 ]
Masahara, M. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst NeRI, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Nissin Ion Equipment Co Ltd, Kyoto, Japan
来源：
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as I-on-I-off, V-th variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.
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页数：4
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