Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs

被引：0

作者：

Mizubayashi, W. ^{[1
]}

Onoda, H. ^{[2
]}

Nakashima, Y. ^{[2
]}

Ishikawa, Y. ^{[1
]}

Matsukawa, T. ^{[1
]}

Endo, K. ^{[1
]}

Liu, Y. X. ^{[1
]}

O'uchi, S. ^{[1
]}

Tsukada, J. ^{[1
]}

Yamauchi, H. ^{[1
]}

Migita, S. ^{[1
]}

Morita, Y. ^{[1
]}

Ota, H. ^{[1
]}

Masahara, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst NeRI, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Nissin Ion Equipment Co Ltd, Kyoto, Japan

来源：

2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as I-on-I-off, V-th variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.

引用

页数：4

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