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- [1] 28nm Node Process Optimization: A Lithography Centric View30TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2014, 9231Seltmann, Rolf论文数: 0 引用数: 0 h-index: 0机构: Module One LLC & Co KG, GLOBALFOUNDRIES Dresden, D-01109 Dresden, Germany Module One LLC & Co KG, GLOBALFOUNDRIES Dresden, D-01109 Dresden, Germany
- [2] NICKEL SILICIDE ANNEAL PROCESS RESEARCH FOR 28NM CMOS NODE2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017), 2017,Wen, Zhenping论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201210, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201210, Peoples R ChinaCheng, Xinhua论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201210, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201210, Peoples R ChinaFang, Jingxun论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201210, Peoples R China
- [3] CPI Challenges to BEOL at 28nm Node and Beyond2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,Ryan, Vivian论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USA GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USABreuer, Dirk论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAGeisler, Holm论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAKioussis, Dimitri论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, Hopewell Jct, NY 12533 USA GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USALehr, Matthias U.论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAPaul, Jens论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAMachani, Kashi论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAShah, Chirag论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, Sunnyvale, CA 94085 USA GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAKosgalwies, Sven论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USALehmann, Lothar论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USALee, Jaesik论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAKuechenmeister, Frank论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USARyan, E. Todd论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USA GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USAKarimanal, Kamal论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES Inc, Sunnyvale, CA 94085 USA GLOBALFOUNDRIES Inc, 257 Fuller Rd, Albany, NY 12203 USA
- [4] Future Logic Device Technologies beyond the 28nm node2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 434 - 437Kim, Dong-won论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South KoreaChoi, Siyoung论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South KoreaYoon, Jong Shik论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South KoreaChung, Chilhee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South Korea
- [5] Metal layer PWOPC solution for 28nm node and beyond2015 China Semiconductor Technology International Conference, 2015,Wang, Dan论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaYu, Shirui论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaMao, Zhibiao论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaWang, Xiang论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaChen, Yanpeng论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China
- [6] METAL LAYER OPC REPAIR FLOW FOR 28NM NODE AND BEYOND2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2016,Wang, Dan论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaYu, Shirui论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaMao, Zhibiao论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaWang, Xiang论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaChen, Yanpeng论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R ChinaZhou, Jianqiang论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China Shanghai Huali Microelect Corp, 497 Gao Si Rd, Shanghai, Peoples R China
- [7] In-Die Mask Registration Measurement on 28nm Node and BeyondPHOTOMASK TECHNOLOGY 2013, 2013, 8880Chen, Shen Hung论文数: 0 引用数: 0 h-index: 0机构: United Microelect Corp, Sinshih Township 741, Tainan County, Taiwan United Microelect Corp, Sinshih Township 741, Tainan County, TaiwanCheng, Yung Feng论文数: 0 引用数: 0 h-index: 0机构: United Microelect Corp, Sinshih Township 741, Tainan County, Taiwan United Microelect Corp, Sinshih Township 741, Tainan County, TaiwanChen, Ming Jui论文数: 0 引用数: 0 h-index: 0机构: United Microelect Corp, Sinshih Township 741, Tainan County, Taiwan United Microelect Corp, Sinshih Township 741, Tainan County, Taiwan
- [8] Study of Process Window Discovery Methodology for 28nm and Beyond Technology Node Process Window Limiting Structures2020 31ST ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2020,Zhang, Xingdi论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R China Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R ChinaChen, Hunglin论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R China Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R ChinaLong, Yin论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R China Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R ChinaWang, Kai论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R China Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R China
- [9] The Study of 28nm Node Poly Double Patterning Integrated Process2015 China Semiconductor Technology International Conference, 2015,Li, Zhonghua论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaLi, Runling论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaGuan, Tianpeng论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaLiu, Biqiu论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaMao, Xiaoming论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaMeng, Xiangguo论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaLi, Quanbo论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaLi, Fang论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaYang, Zhengkai论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaZhang, Yu论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R ChinaPang, Albert论文数: 0 引用数: 0 h-index: 0机构: Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China
- [10] Robust Porous SiOCH (k=2.5) for 28nm and beyond Technology Node2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM), 2011,Lee, Janghee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaAhn, Sang Hoon论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaJung, Insun论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Analyt Engn Grp, Gyeonggi 446712, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaHan, Kyu-Hee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaKim, Gyeonghee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaSang-Don Nam论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaJeon, Woo Sung论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Analyt Engn Grp, Gyeonggi 446712, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaKim, Byeong Hee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaChoi, Gil Heyun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaChoi, Siyoung论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaKang, Ho-Kyu论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South KoreaChung, Chilhee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea