Design for velocity saturated, short-channel CMOS drivers with simultaneous switching noise and switching time considerations

被引:14
|
作者
Yang, YC [1 ]
Brews, JR [1 ]
机构
[1] UNIV ARIZONA,DEPT ELECT & COMP ENGN,TUCSON,AZ 85721
关键词
D O I
10.1109/4.535425
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Design guidelines for velocity-saturated, short-channel CMOS drivers are presented in this paper based on approximating the package inductance by an effective, lumped, power-supply bus parasitic inductance. A worst-case maximum simultaneous switching noise V-GM and gate propagation delay time t(D,1/2) are treated as performance constraints for which driver design tradeoffs between driver geometry, the maximum number of simultaneously switched drivers, and the effective inductance are obtained, For typical loading conditions, design examples based on the proposed guidelines are shown by SPICE simulations using the MOS3 model to agree with both design goals within 10%.
引用
收藏
页码:1357 / 1360
页数:4
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