Charge models of radiation technology of formation of submicron MOS structures of large integrated circuits

被引：0

作者：

Novosyadly, SP ^{[1
]}

机构：

[1] Vasyl Stefanik Univ, UA-76000 Ivano Frankovsk, Ukraine

来源：

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2002年 / 24卷 / 07期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1001 / 1011

页数：11

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