Charge models of radiation technology of formation of submicron MOS structures of large integrated circuits

被引：0
|
作者：
Novosyadly, SP [1 ]
机构：
[1] Vasyl Stefanik Univ, UA-76000 Ivano Frankovsk, Ukraine
来源：
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2002年 / 24卷 / 07期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：1001 / 1011
页数：11
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