Modelling charge injection in MOS analogue switches using a compact model in a deep submicron technology

被引：5
|
作者：
Dei, A. [1 ]
Valle, M. [1 ]
机构：
[1] Univ Genoa, Dept Biophys & Elect Engn DIBE, I-16145 Genoa, Italy
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2006年 / 153卷 / 03期
关键词：
D O I：
10.1049/ip-cds:20045088
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge injection in MOS switches in a deep submicron technology has been analysed. The analysis has been extended to the general case of including the conduction of the MOS transistor in the moderate and weak inversion regions, using a continuous and physical formulation based on the EKV model. SPICE simulations, based on the BSIM3v3 model, which ensures the charge conservation, have demonstrated the validity of our work.
引用
收藏
页码：269 / 273
页数：5
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