An accurate model of submicron MOS electrical characteristics for analogue applications

An accurate and physics-based analytical model for the submicron MOSFET with application in analogue design is presented. The model considers velocity saturation and carrier mobility degradation in the channel. Analytical equations for the drain current and for transconductance in the strong inversion region are derived. The combined effects of the horizontal and vertical fields are taken in account. A different approach to electron velocity modelling in the channel is proposed in order to obtain the same current expressions for both nMOS and pMOS devices. The channel length modulation is also taken into account. New parameters are introduced for the description of these secondary effects. A very good agreement between the model and data measured on 0.22 mu m CMOS process devices is proved. This model, being based on a reduced set of parameters, has the ability of being simply implemented in an analogue ICs simulator.