Modelling charge injection in MOS analogue switches using a compact model in a deep submicron technology

被引：5

作者：

Dei, A. ^{[1
]}

Valle, M. ^{[1
]}

机构：

[1] Univ Genoa, Dept Biophys & Elect Engn DIBE, I-16145 Genoa, Italy

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2006年 / 153卷 / 03期

关键词：

D O I：

10.1049/ip-cds:20045088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge injection in MOS switches in a deep submicron technology has been analysed. The analysis has been extended to the general case of including the conduction of the MOS transistor in the moderate and weak inversion regions, using a continuous and physical formulation based on the EKV model. SPICE simulations, based on the BSIM3v3 model, which ensures the charge conservation, have demonstrated the validity of our work.

引用

页码：269 / 273

页数：5

共 50 条

[31] Design and performance improvement of low power SRAM using deep submicron technology
Ujwal Ramesh Shirode
Rajendra D. Kanphade
Analog Integrated Circuits and Signal Processing, 2023, 114 : 75 - 87
[32] Design and performance improvement of low power SRAM using deep submicron technology
Shirode, Ujwal Ramesh
Kanphade, Rajendra D.
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2023, 114 (01) : 75 - 87
[33] An innovative interconnect structure with improved Elmore delay estimation model for deep submicron technology
Bhardwaj, Himani
Jain, Shruti
Sohal, Harsh
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2022, 111 (03) : 419 - 439
[34] An innovative interconnect structure with improved Elmore delay estimation model for deep submicron technology
Himani Bhardwaj
Shruti Jain
Harsh Sohal
Analog Integrated Circuits and Signal Processing, 2022, 111 : 419 - 439
[35] Evaluation of surface-potential-based bull-charge compact MOS transistor model
Jie, BB
Sah, CT
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) : 1787 - 1794
[36] A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects
Zhou, X
Chiah, SB
Lim, KY
SOLID-STATE ELECTRONICS, 2004, 48 (12) : 2125 - 2131
[37] A compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
Wu, HC
Kuo, JB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 417 - 422
[38] A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects
Zhou, X
Chiah, SB
Lim, KY
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 653 - 656
[39] Compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
Natl Taiwan Univ, Taipei, Taiwan
IEEE Trans Electron Devices, 2 (417-422):
[40] Low power domino logic circuits in deep-submicron technology using CMOS
Garg, Sandeep
Gupta, Tarun Kumar
ENGINEERING SCIENCE AND TECHNOLOGY-AN INTERNATIONAL JOURNAL-JESTECH, 2018, 21 (04): : 625 - 638

← 1 2 3 4 5 →