Extraction of Drain Current Thermal Noise in a 28 nm High-k/Metal Gate RF CMOS Technology

被引：5
|
作者：
Zhang, Huaiyuan [1 ]
Niu, Guofu [1 ]
Liang, Qingqing [2 ]
Imura, Kimihiko [3 ]
机构：
[1] Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA
[2] Qualcomm Inc, San Diego, CA 92121 USA
[3] MaxLinear Inc, Carlsbad, CA 92008 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 06期
关键词：
Gate resistance; noise; RF CMOS; RESISTANCE; TRANSISTORS; MOSFETS; MODEL;
D O I：
10.1109/TED.2018.2820698
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates RF noise in a 28-nm replacement metal gate RF CMOS technology. The gate resistance is shown to be limited by interfacial resistance in metal gate stack. Intrinsic noise factor gamma(int)(gd0) = S-id(int)/4kTg(d0) and shot noise suppression factor k(S)(int) = S-id(int)/2qI(DS) are extracted. g(d0) from S-parameters is shown to be more accurate than from dc I-V. gamma(int)(gd0) remains less than 2, despite a large increase from 90-nm gate length, as well as a much stronger increase with V-DS. k(s)(int) shows a decrease on V-GS and a weak increase on V-DS. Of all four noise parameters, noise resistance plays the most significant role in intrinsic drain current noise extraction. Extrinsic and intrinsic noise resistance can be modeled by simple expressions.
引用
收藏
页码：2393 / 2399
页数：7
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