Extraction of Drain Current Thermal Noise in a 28 nm High-k/Metal Gate RF CMOS Technology

被引：5

作者：

Zhang, Huaiyuan ^{[1
]}

Niu, Guofu ^{[1
]}

Liang, Qingqing ^{[2
]}

Imura, Kimihiko ^{[3
]}

机构：

[1] Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA

[2] Qualcomm Inc, San Diego, CA 92121 USA

[3] MaxLinear Inc, Carlsbad, CA 92008 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 06期

关键词：

Gate resistance; noise; RF CMOS; RESISTANCE; TRANSISTORS; MOSFETS; MODEL;

D O I：

10.1109/TED.2018.2820698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates RF noise in a 28-nm replacement metal gate RF CMOS technology. The gate resistance is shown to be limited by interfacial resistance in metal gate stack. Intrinsic noise factor gamma(int)(gd0) = S-id(int)/4kTg(d0) and shot noise suppression factor k(S)(int) = S-id(int)/2qI(DS) are extracted. g(d0) from S-parameters is shown to be more accurate than from dc I-V. gamma(int)(gd0) remains less than 2, despite a large increase from 90-nm gate length, as well as a much stronger increase with V-DS. k(s)(int) shows a decrease on V-GS and a weak increase on V-DS. Of all four noise parameters, noise resistance plays the most significant role in intrinsic drain current noise extraction. Extrinsic and intrinsic noise resistance can be modeled by simple expressions.

引用

页码：2393 / 2399

页数：7

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