Reliability Enhanced Heterogeneous Phase Change Memory Architecture for Performance and Energy Efficiency

被引:10
|
作者
Kwon, Taehyun [1 ]
Imran, Muhammad [2 ]
Yang, Joon-Sung [3 ]
机构
[1] Dept Semicond & Display Engn, Seoul, South Korea
[2] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea
[3] Yonsei Univ, Dept Semicond Syst Engn, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
Next-generation memories; emerging memories; error correction code (ECC); multi-level cell (MLC); phase change memory (PCM); resistance drift; RANDOM-ACCESS MEMORY; SYSTEM; POWER;
D O I
10.1109/TC.2020.3009498
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Next-generation memories have been actively researched to replace the existing memories like DRAM and flash in deep sub-micron process technology. Unlike the conventional charge-based memories, next-generation memories utilize the resistive properties of different materials to store and read a data. Among the next-generation memories, Phase Change Memory (PCM) is seen as a good choice for future memory systems, given its good read performance, process compatibility and scaling potential. To enhance the storage density, multi-level cell (MLC) operation is seemed promising which can store more than one bit in each PCM cell. However, MLC operation significantly degrades the reliability of PCM, thus requiring a strong Error Correction Code (ECC) to guarantee correct memory operation. The use of heavyweight ECC comes at cost of significant degradations in storage density, performance and energy efficiency. In this article, we propose a heterogeneous PCM architecture which uses both multi-level cell and single-level cell (SLC) together for a single word line. With highly-reliable SLC cells, the overall array reliability is enhanced. To improve the reliability further, a dynamic self-encoding/decoding scheme is performed before the data is written to the PCM cells. The dynamic scheme automatically determines the locations of MLC and SLC cells and sets the corresponding resistance levels to be programmed. Since the proposed encoding/decoding scheme does not require any additional stages or storages for encoding and decoding, the overhead is negligible. The improved reliability allows to use lighter ECC scheme which in turn helps to improve performance and energy efficiency of the MLC PCM. The experimental results show that the reliability is improved by approximately 10(6) times compared dto the conventional 4LC and more than 10(3) times compared to the existing encoding methods. The performance improvement is 21.5 percent over the conventional 4LC and is more than 4.1 percent higher than the prior encoding techniques. The proposed method is 30.3 percent more energy efficient than the conventional 4LC and this is similar or higher than other energy efficiency improvement methods.
引用
收藏
页码:1388 / 1400
页数:13
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