On the dynamic resistance and reliability of phase change memory

被引：0

作者：

Rajendran, B. ^{[1
,2
,3
,4
,5
]}

Lee, M-H. ^{[2
]}

Breitwisch, M. ^{[1
]}

Burr, G. W. ^{[4
]}

Shih, Y-H. ^{[2
]}

Cheek, R. ^{[1
]}

Schrott, A. ^{[1
]}

Chen, C-F. ^{[2
]}

Lamorey, M. ^{[3
]}

Joseph, E. ^{[1
]}

Zhu, Y. ^{[1
]}

Dasaka, R. ^{[1
]}

Flaitz, P. L. ^{[5
]}

Baumann, F. H. ^{[5
]}

Lung, H-L. ^{[2
]}

Lam, C. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, IBM Macronix PCRAM Joint Project, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA

[2] Macronix Int Co Ltd, Yorktown Hts, NY 10598 USA

[3] AIBM Essex Junct, Yorktown Hts, NY 10598 USA

[4] IBM Almaden Res Ctr, Yorktown Hts, NY 10598 USA

[5] IBM Hopewell Junct, Yorktown Hts, NY 10598 USA

来源：

2008 SYMPOSIUM ON VLSI TECHNOLOGY | 2008年

关键词：

PCRAM; NV memory and chalcogenide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel characterization metric for phase change memory based an the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (R-d) is inversely related to the programming current (1), as R-d = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.

引用

页码：73 / +

页数：2

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