On the dynamic resistance and reliability of phase change memory

被引：0

作者：

Rajendran, B. ^{[1
,2
,3
,4
,5
]}

Lee, M-H. ^{[2
]}

Breitwisch, M. ^{[1
]}

Burr, G. W. ^{[4
]}

Shih, Y-H. ^{[2
]}

Cheek, R. ^{[1
]}

Schrott, A. ^{[1
]}

Chen, C-F. ^{[2
]}

Lamorey, M. ^{[3
]}

Joseph, E. ^{[1
]}

Zhu, Y. ^{[1
]}

Dasaka, R. ^{[1
]}

Flaitz, P. L. ^{[5
]}

Baumann, F. H. ^{[5
]}

Lung, H-L. ^{[2
]}

Lam, C. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, IBM Macronix PCRAM Joint Project, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA

[2] Macronix Int Co Ltd, Yorktown Hts, NY 10598 USA

[3] AIBM Essex Junct, Yorktown Hts, NY 10598 USA

[4] IBM Almaden Res Ctr, Yorktown Hts, NY 10598 USA

[5] IBM Hopewell Junct, Yorktown Hts, NY 10598 USA

来源：

2008 SYMPOSIUM ON VLSI TECHNOLOGY | 2008年

关键词：

PCRAM; NV memory and chalcogenide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel characterization metric for phase change memory based an the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (R-d) is inversely related to the programming current (1), as R-d = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.

引用

页码：73 / +

页数：2

共 50 条

[41] Crystallization dynamics probed by transient resistance in phase change memory cells
Ordan, Efrat
Nir-Harwood, Rivka-Galya
Dahan, Mor M.
Keller, Yair
Yalon, Eilam
JOURNAL OF APPLIED PHYSICS, 2024, 135 (20)
[42] Dynamic switching characteristic dependence on sidewall angle for phase change memory
Long, X. M.
Miao, X. S.
Sun, J. J.
Cheng, X. M.
Tong, H.
Li, Y.
Yang, D. H.
Huang, J. D.
Liu, C.
SOLID-STATE ELECTRONICS, 2012, 67 (01) : 1 - 5
[43] DyPhase: A Dynamic Phase Change Memory Architecture with Symmetric Write Latency
Thakkar, Ishan G.
Pasricha, Sudeep
2017 30TH INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2017 16TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS (VLSID 2017), 2017, : 41 - 46
[44] Phase change memory
Jing Li
Chung Lam
Science China Information Sciences, 2011, 54 : 1061 - 1072
[45] Phase Change Memory
Wong, H. -S. Philip
Raoux, Simone
Kim, SangBum
Liang, Jiale
Reifenberg, John P.
Rajendran, Bipin
Asheghi, Mehdi
Goodson, Kenneth E.
PROCEEDINGS OF THE IEEE, 2010, 98 (12) : 2201 - 2227
[46] Phase Change Memory
Breitwisch, Matthew J.
PROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2008, : 219 - 221
[47] Phase change memory
Li Jing
Lam, Chung
SCIENCE CHINA-INFORMATION SCIENCES, 2011, 54 (05) : 1061 - 1072
[48] Phase change memory
LAM Chung
Science China(Information Sciences), 2011, 54 (05) : 1061 - 1072
[49] Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
Jun-seop An
Chul-min Choi
Satoshi Shindo
Yuji Sutou
Yong-woo Kwon
Yun-heub Song
Journal of Computational Electronics, 2016, 15 : 1570 - 1576
[50] Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
An, Jun-seop
Choi, Chul-min
Shindo, Satoshi
Sutou, Yuji
Kwon, Yong-woo
Song, Yun-heub
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (04) : 1570 - 1576

← 1 2 3 4 5 →