Growth of low micropipe density SiC wafers

被引：5

作者：

Powell, A ^{[1
]}

Wang, SP ^{[1
]}

Brandes, G ^{[1
]}

机构：

[1] ATMI Inc, Danbury, CT 06810 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

hexagonal voids; micropipe; super screw dislocations;

D O I：

10.4028/www.scientific.net/MSF.338-342.437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mechanisms for the creation of the micropipe defect are discussed. In particular, the generation and propagation of hexagonal voids is shown to be one source of the micropipe defect within SiC material. The micropipes can be directly traced to hexagonal voids and we find the micropipes terminating at the hexagonal void within the crystal.

引用

页码：437 / 440

页数：4

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