CARBONIZATION-INDUCED SIC MICROPIPE FORMATION IN CRYSTALLINE SI

被引：21
|
作者：
SCHOLZ, R [1 ]
GOSELE, U [1 ]
NIEMANN, E [1 ]
LEIDICH, D [1 ]
机构：
[1] DAIMLER BENZ AG,FORSCHUNGSINST,D-60528 FRANKFURT,GERMANY
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 10期
关键词：
D O I：
10.1063/1.114492
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The defect structure of Si substrates at their beta-SiC/Si interfaces generated in a chemical vapor deposition (CVD) process by carbonization with C2H4 has been investigated in detail by transmission electron microscopy (TEM) using differently prepared cross section and planar specimens. A new category of defects of minute size and high area density has been found and identified as SiC micropipes formed by Si outdiffusion and simultaneous ingrowth of SiC. A model of self-adjusting micropipe formation is proposed. (C) 1995 American Institute of Physics.
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收藏
页码：1453 / 1455
页数：3
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