CARBONIZATION-INDUCED SIC MICROPIPE FORMATION IN CRYSTALLINE SI

被引：21

作者：

SCHOLZ, R ^{[1
]}

GOSELE, U ^{[1
]}

NIEMANN, E ^{[1
]}

LEIDICH, D ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSINST,D-60528 FRANKFURT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.114492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The defect structure of Si substrates at their beta-SiC/Si interfaces generated in a chemical vapor deposition (CVD) process by carbonization with C2H4 has been investigated in detail by transmission electron microscopy (TEM) using differently prepared cross section and planar specimens. A new category of defects of minute size and high area density has been found and identified as SiC micropipes formed by Si outdiffusion and simultaneous ingrowth of SiC. A model of self-adjusting micropipe formation is proposed. (C) 1995 American Institute of Physics.

引用

页码：1453 / 1455

页数：3

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