Growth of low micropipe density SiC wafers

被引：5
|
作者：
Powell, A [1 ]
Wang, SP [1 ]
Brandes, G [1 ]
机构：
[1] ATMI Inc, Danbury, CT 06810 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
hexagonal voids; micropipe; super screw dislocations;
D O I：
10.4028/www.scientific.net/MSF.338-342.437
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mechanisms for the creation of the micropipe defect are discussed. In particular, the generation and propagation of hexagonal voids is shown to be one source of the micropipe defect within SiC material. The micropipes can be directly traced to hexagonal voids and we find the micropipes terminating at the hexagonal void within the crystal.
引用
收藏
页码：437 / 440
页数：4
相关论文
共 50 条
  • [31] Growth of Crack-free 100mm-diameter 4H-SiC Crystals with Low Micropipe Densities
    Nakabayashi, M.
    Fujimoto, T.
    Katsuno, M.
    Ohtani, N.
    Tsuge, H.
    Yashiro, H.
    Aigo, T.
    Hoshino, T.
    Hirano, H.
    Tatsumi, K.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 3 - 6
  • [32] Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer
    Kojima, K.
    Nishizawa, S.
    Kuroda, S.
    Okumura, H.
    Arai, K.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E549 - E554
  • [33] Surface step model for micropipe formation in SiC
    Ohtani, N
    Katsuno, M
    Fujimoto, T
    Aigo, T
    Yashiro, H
    JOURNAL OF CRYSTAL GROWTH, 2001, 226 (2-3) : 254 - 260
  • [34] Growth of low defect density mc-Si ingots and wafers for PV application
    Zhang, Zhiqiang
    Zhang, Yingbin
    Xiong, Zhen
    Ye, Hongliang
    Ping, Feilin
    Fu, Shaoyong
    Feng, Zhiqiang
    Verlinden, Pierre J.
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 3043 - 3045
  • [35] Growth of micropipe free crystals on 4H-SiC {03-38} seeds
    Furusho, T.
    Kobayashi, R.
    Nishiguchi, T.
    Sasaki, M.
    Hirai, K.
    Hayashi, T.
    Kinoshita, H.
    Shiomi, H.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 35 - +
  • [36] Micropipe and low-angle grain boundaries in 6H-SiC single crystal
    Han, Rong-Jiang
    Wang, Ji-Yang
    Hu, Xiao-Bo
    Xu, Xian-Gang
    Dong, Jie
    Li, Xian-Xiang
    Jiang, Min-Hua
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2004, 33 (03):
  • [37] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
    Rendakova, SV
    Nikitina, IP
    Tregubova, AS
    Dmitriev, VA
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 292 - 295
  • [38] Growth of low basal plane dislocation density SiC epitaxial layers
    Zhang, Z.
    Sudarshan, T. S.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 243 - +
  • [39] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
    S. V. Rendakova
    I. P. Nikitina
    A. S. Tregubova
    V. A. Dmitriev
    Journal of Electronic Materials, 1998, 27 : 292 - 295
  • [40] Sublimation growth of 50mm diameter SiC wafers
    Powell, AR
    Wang, S
    Fechko, G
    Brandes, GR
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 13 - 16
12345