Planar p-n diodes fabricated by MeV-energy and high-temperature selective implantation of aluminum to 4H-SiC

被引：1

作者：

Sugimoto, H ^{[1
]}

Kinouchi, S ^{[1
]}

Tarui, Y ^{[1
]}

Imaizumi, M ^{[1
]}

Ohtsuka, K ^{[1
]}

Takami, T ^{[1
]}

Ozeki, T ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

electrical activation; aluminium; annealing; diode characteristics; Hall effect; implantation damage; leakage current; Rutherford backscattering spectrometry (RBS); selective implantation;

D O I：

10.4028/www.scientific.net/MSF.353-356.731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-energy and high-temperature (1000 degreesC) implantations are studied. Implanted p region with 3 mum thickness and 5x10(18)/cm(3) concentration are fabricated. RES measurements show that high-temperature implantation reduces the damage of implantation before as well as after activation annealing. C-V measurements indicates that most of the implanted Al ions are activated to accepters over 1500 degreesC annealing. Hall effect measurements show that Hall mobility increases with annealing temperature to 30cm(2)/Vs and sheet resistance decreases to 5k Omega/square. Planar p-n diodes with 3 mum thick p regions are fabricated by selective implantation using masks of Mo. High-temperature implantation has effect to reduce reverse leakage currents. It is assumed that the high-temperature implantation dose not cause the severe damage, which may remain the origin of leakage currents after activation annealing.

引用

页码：731 / 734

页数：4

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