Planar p-n diodes fabricated by MeV-energy and high-temperature selective implantation of aluminum to 4H-SiC

High-energy and high-temperature (1000 degreesC) implantations are studied. Implanted p region with 3 mum thickness and 5x10(18)/cm(3) concentration are fabricated. RES measurements show that high-temperature implantation reduces the damage of implantation before as well as after activation annealing. C-V measurements indicates that most of the implanted Al ions are activated to accepters over 1500 degreesC annealing. Hall effect measurements show that Hall mobility increases with annealing temperature to 30cm(2)/Vs and sheet resistance decreases to 5k Omega/square. Planar p-n diodes with 3 mum thick p regions are fabricated by selective implantation using masks of Mo. High-temperature implantation has effect to reduce reverse leakage currents. It is assumed that the high-temperature implantation dose not cause the severe damage, which may remain the origin of leakage currents after activation annealing.