Planar p-n diodes fabricated by MeV-energy and high-temperature selective implantation of aluminum to 4H-SiC

被引：0
|
作者：
Sugimoto, H. [1 ]
Kinouchi, S. [1 ]
Tarui, Y. [1 ]
Imaizumi, M. [1 ]
Ohtsuka, K. [1 ]
Takami, T. [1 ]
Ozeki, T. [1 ]
机构：
[1] Mitsubishi Electric Corporation, Advanced Technology R and D Center, 8-1-1 Tsukaguchi-Honmachi, Amagasaki City, Hyogo 661-8661, Japan
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
D O I：
10.4028/www.scientific.net/msf.353-356.731
中图分类号：
学科分类号：
摘要：
Silicon carbide
引用
收藏
页码：731 / 734
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