High-Performance 4H-SiC EUV Photodiode With Lateral p-n Junction Fabricated by Selective-Area Ion Implantation

In this work, a 4H-SiC EUV photodiode (PD) with lateral p-n junction formed by selective-area ion implantation is investigated, in which grid-shaped p-type contact region is designed for enhancing effective EUV light absorption. The large area SiC PD with 9 mm diameter exhibits a low dark current density of similar to 9 pA/cm(2) and a high responsivity of 0.07 A/W at 13.5 nm under 5 V reverse bias. The detectivity of PD is further determined to be similar to 5.9 x 10(12) cmHz(0.5)W(-1) based on 1/f noise test. Two-dimensional photocurrent mapping of photosensitive area indicates that the non-uniformity of photo-responsivity at 13.5 nm is less than 0.67%. When tested by using a 266 nm pulse laser, the PD shows a fast rise time of similar to 4.3 ns in transient response measurement. The PD also exhibits low dark current, stable capacitance and responsivity at elevated temperatures up to 150 degrees C, suggesting that the detector has good potential for high-temperature operation.